| PART |
Description |
Maker |
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| W19B160TT7H7H W19B160TB7H7H W19B160BT7H7H W19B160T |
16Mbit, 2.7~3.6 volt CMOS flash memory
|
Winbond
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory
32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| W19B160TBAH7H W19B160BBAH7H W19B160TTAM7H W19B160T |
16Mbit, 2.7~3.6 volt CMOS flash memory
16Mbit, 2.7~3.6 volt CMOS flash memory
|
http://
Winbond
|
| A25L032 A25L032-F A25L032-M A25L032-MF A25L032-MU |
16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors
|
AMIC Technology
|
| LHF16KA1 LH28F160S3NS-L10 |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Electrionic Components
|
| V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| GS72116J-15 GS72116U-15I GS72116TP-15I GS72116J-8I |
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PDSO44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 8 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PBGA48
128K x 16 2Mb Asynchronous SRAM 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
GSI Technology, Inc.
|
| MT58L64L32P MT58L64L36P |
(MT58LxxxxP) 2Mb SRAM
|
Micron Semiconductor
|
| MT58L64L32D MT58L64L36D |
(MT58LxxxLxxD) 2Mb SRAM
|
Micron Semiconductor
|
